The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Aug. 06, 2010
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrateat a dosage of 1.5×10atoms/cmor higher to form the hydrogen ion implanted layer (ion-implanted damage layer). As a result of the hydrogen ion implantation, the hydrogen ion implanted boundaryis formed. The single crystal Si substrateand the low melting glass substrateare bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundaryof the single crystal Si substrateout of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin filmis polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.