The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Apr. 09, 2010
Yu Chao Lin, Rende Township, TW;
Jr Jung Lin, Wurih Township, TW;
Yih-ann Lin, Jhudong Township, TW;
Jih-jse Lin, Sijhih, TW;
Chao-cheng Chen, Shinchu, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Weng Chang, Hsinchu, TW;
Yu Chao Lin, Rende Township, TW;
Jr Jung Lin, Wurih Township, TW;
Yih-Ann Lin, Jhudong Township, TW;
Jih-Jse Lin, Sijhih, TW;
Chao-Cheng Chen, Shinchu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Weng Chang, Hsinchu, TW;
Abstract
An exemplary structure for a gate structure of a field effect transistor comprises a gate electrode; a gate insulator under the gate electrode having footing regions on opposing sides of the gate electrode; and a sealing layer on sidewalls of the gate structure, wherein a thickness of lower portion of the sealing layer overlying the footing regions is less than a thickness of upper portion of the sealing layer on sidewalls of the gate electrode, whereby the field effect transistor made has almost no recess in the substrate surface.