The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jan. 20, 2009
Kenji Matsumoto, Nirasaki, JP;
Hitoshi Itoh, Nirasaki, JP;
Hiroshi Sato, Nirasaki, JP;
Junichi Koike, Sendai, JP;
Koji Neishi, Nirasaki, JP;
Kenji Matsumoto, Nirasaki, JP;
Hitoshi Itoh, Nirasaki, JP;
Hiroshi Sato, Nirasaki, JP;
Junichi Koike, Sendai, JP;
Koji Neishi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
National University Corporation Tohoku University, Miyagi-ken, JP;
Abstract
When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.