The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Apr. 07, 2010
Bing Ji, Pleasanton, CA (US);
Kenji Takeshita, Sunnyvale, CA (US);
Andrew D. Bailey, Iii, Pleasanton, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Maryam Moravej, Mountain View, CA (US);
Stephen M. Sirard, Austin, TX (US);
Jungmin Ko, Mountain View, CA (US);
Daniel Le, Santa Clara, CA (US);
Robert C. Hefty, Laguna Niguel, CA (US);
Yu Cheng, Fremont, CA (US);
Gerardo A. Delgadino, Milpitas, CA (US);
Bi-ming Yen, Fremont, CA (US);
Bing Ji, Pleasanton, CA (US);
Kenji Takeshita, Sunnyvale, CA (US);
Andrew D. Bailey, III, Pleasanton, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Maryam Moravej, Mountain View, CA (US);
Stephen M. Sirard, Austin, TX (US);
Jungmin Ko, Mountain View, CA (US);
Daniel Le, Santa Clara, CA (US);
Robert C. Hefty, Laguna Niguel, CA (US);
Yu Cheng, Fremont, CA (US);
Gerardo A. Delgadino, Milpitas, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.