The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Mar. 31, 2010
Ming-hui Chih, Luzhou, TW;
Cheng-kun Tsai, Hsinchu, TW;
Wen-chun Huang, Xi-Gang Xiang, TW;
Ru-gun Liu, Hsinchu, TW;
Chii-ping Chen, Taichung, TW;
Jiing-feng Yang, Zhubei, TW;
Ming-Hui Chih, Luzhou, TW;
Cheng-Kun Tsai, Hsinchu, TW;
Wen-Chun Huang, Xi-Gang Xiang, TW;
Ru-Gun Liu, Hsinchu, TW;
Chii-Ping Chen, Taichung, TW;
Jiing-Feng Yang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is an apparatus for fabricating a semiconductor device. The apparatus includes a first photomask and a second photomask. The first photomask has a plurality of first features thereon, and the first photomask having a first global pattern density. The second photomask has a plurality of second features thereon, and the second photomask has a second global pattern density. The plurality of first and second features collectively define a layout image of a layer of the semiconductor device. The first and second global pattern densities have a predetermined ratio.