The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Nov. 28, 2006
Chien-hsueh Shih, Taipei, TW;
Minghsing Tsai, Chu-Pei, TW;
Chen-hua Yu, Hsin-Chu, TW;
Ming-shih Yeh, Chupei, TW;
Chien-Hsueh Shih, Taipei, TW;
Minghsing Tsai, Chu-Pei, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Ming-Shih Yeh, Chupei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a first opening in the low-k dielectric layer, and a first diffusion barrier layer in the first opening covering the low-k dielectric layer in the first opening, wherein the first diffusion barrier layer has a bottom portion connected to sidewall portions, and wherein the sidewall portions have top surfaces close to a top surface of the low-k dielectric layer. The integrated circuit further includes a conductive line filling the first opening wherein the conductive line has a top surface lower than the top surfaces of the sidewall portions of the diffusion barrier layer, and a metal cap on the conductive line and only within a region directly over the conductive line.