The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Nov. 24, 2009
Feng Wang, Fremont, CA (US);
Victor Y. LU, Santa Cruz, CA (US);
Brian LU, Fremont, CA (US);
Wai-fan Yau, Los Altos, CA (US);
Nerissa Draeger, Fremont, CA (US);
Feng Wang, Fremont, CA (US);
Victor Y. Lu, Santa Cruz, CA (US);
Brian Lu, Fremont, CA (US);
Wai-Fan Yau, Los Altos, CA (US);
Nerissa Draeger, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.