The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Aug. 06, 2007
Feng Wang, Fremont, CA (US);
Victor Y. LU, Santa Cruz, CA (US);
Brian LU, Fremont, CA (US);
Wai-fan Yau, Los Altos, CA (US);
Feng Wang, Fremont, CA (US);
Victor Y. Lu, Santa Cruz, CA (US);
Brian Lu, Fremont, CA (US);
Wai-Fan Yau, Los Altos, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0.13 μm.