The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Apr. 12, 2010
Matt Yeh, Hsinchun, TW;
Fan-yi Hsu, Toufen Town, TW;
Shun Wu Lin, Taichung, TW;
Hui Ouyang, Chubei, TW;
Chi-ming Yang, Hsian-San District, TW;
Matt Yeh, Hsinchun, TW;
Fan-Yi Hsu, Toufen Town, TW;
Shun Wu Lin, Taichung, TW;
Hui Ouyang, Chubei, TW;
Chi-Ming Yang, Hsian-San District, TW;
Abstract
A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.