The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Apr. 05, 2010
Yih-ann Lin, Jhudong Township, TW;
Hao-ming Lien, Hsinchu, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Jr Jung Lin, Wurih Township, TW;
Yu Chao Lin, Rende Township, TW;
Chih-han Lin, Tainan, TW;
Yih-Ann Lin, Jhudong Township, TW;
Hao-Ming Lien, Hsinchu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Jr Jung Lin, Wurih Township, TW;
Yu Chao Lin, Rende Township, TW;
Chih-Han Lin, Tainan, TW;
Abstract
The disclosure relates to integrated circuit fabrication, and more particularly to an electronic device with an isolation structure having almost no divot. An exemplary method for fabricating an isolation structure, comprising: forming a pad oxide layer over a top surface of a substrate; forming an opening in the pad oxide layer, exposing a portion of the substrate; etching the exposed portion of the substrate, forming a trench in the substrate; filling the trench with an insulator; exposing a surface of the pad oxide layer and a surface of the insulator to a vapor mixture including at least an NH3 and a fluorine-containing compound; and heating the substrate at a temperature between 100° C. to 200° C.