The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Mar. 10, 2008
Yoshiki Hishiro, Sunnyvale, CA (US);
Lijing Gou, Bosie, ID (US);
Scott E. Sills, Boise, ID (US);
Hiroyuki Mori, Boise, ID (US);
Paul D. Shirley, Meridian, ID (US);
Troy V. Gugel, Boise, ID (US);
Adam L. Olson, Boise, ID (US);
Yoshiki Hishiro, Sunnyvale, CA (US);
Lijing Gou, Bosie, ID (US);
Scott E. Sills, Boise, ID (US);
Hiroyuki Mori, Boise, ID (US);
Paul D. Shirley, Meridian, ID (US);
Troy V. Gugel, Boise, ID (US);
Adam L. Olson, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.