The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jul. 09, 2008
Arno Jan Bleeker, Westerhoven, NL;
Dominicus Jacobus Petrus Adrianus Franken, Veldhoven, NL;
Peter C. Kochersperger, Easton, CT (US);
Kars Zeger Troost, Waalre, NL;
Arno Jan Bleeker, Westerhoven, NL;
Dominicus Jacobus Petrus Adrianus Franken, Veldhoven, NL;
Peter C. Kochersperger, Easton, CT (US);
Kars Zeger Troost, Waalre, NL;
ASML Holding N.V., Veldhoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.