The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Oct. 22, 2008
Applicants:

Ru-yi Su, Kouhu Township, Yunlin County, TW;

Puo-yu Chiang, Su-ao Township, Yilan County, TW;

Jeng Gong, Hsinchu, TW;

Tsung-yi Huang, Hsinchu, TW;

Chun-lin Tsai, Hsinchu, TW;

Chien-chih Chou, Zhubei, TW;

Inventors:

Ru-Yi Su, Kouhu Township, Yunlin County, TW;

Puo-Yu Chiang, Su-ao Township, Yilan County, TW;

Jeng Gong, Hsinchu, TW;

Tsung-Yi Huang, Hsinchu, TW;

Chun-Lin Tsai, Hsinchu, TW;

Chien-Chih Chou, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate, a source region and a drain region formed in the substrate, a gate structure formed on the substrate disposed between the source and drain regions, and a first isolation structure formed in the substrate between the gate structure and the drain region, the first isolation structure including projections that are located proximate to an edge of the drain region. Each projection includes a width measured in a first direction along the edge of the drain region and a length measured in a second direction perpendicular to the first direction, and adjacent projections are spaced a distance from each other.


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