The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

May. 27, 2009
Applicants:

Takeo Katoh, Tokyo, JP;

Ryuichi Tanimoto, Tokyo, JP;

Shinichi Ogata, Tokyo, JP;

Takeru Takushima, Tokyo, JP;

Kazushige Takaishi, Tokyo, JP;

Inventors:

Takeo Katoh, Tokyo, JP;

Ryuichi Tanimoto, Tokyo, JP;

Shinichi Ogata, Tokyo, JP;

Takeru Takushima, Tokyo, JP;

Kazushige Takaishi, Tokyo, JP;

Assignee:

Sumco Corporation, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.


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