The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Dec. 29, 2009
Tzung-i Su, Yunlin County, TW;
Ming-i Wang, Taipei County, TW;
Bang-chiang Lan, Taipei, TW;
Te-kan Liao, Hsinchu, TW;
Chao-an Su, Kaohsiung County, TW;
Chien-hsin Huang, Taichung, TW;
Hui-min Wu, Hsinchu County, TW;
Tzung-han Tan, Taipei, TW;
Min Chen, Taipei County, TW;
Meng-jia Lin, Changhua County, TW;
Tzung-I Su, Yunlin County, TW;
Ming-I Wang, Taipei County, TW;
Bang-Chiang Lan, Taipei, TW;
Te-Kan Liao, Hsinchu, TW;
Chao-An Su, Kaohsiung County, TW;
Chien-Hsin Huang, Taichung, TW;
Hui-Min Wu, Hsinchu County, TW;
Tzung-Han Tan, Taipei, TW;
Min Chen, Taipei County, TW;
Meng-Jia Lin, Changhua County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.