The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
May. 12, 2008
Cheng-tung Lin, Jhudong Township, TW;
Yung-sheng Chiu, Hsin-Chu, TW;
Hsiang-yi Wang, Hsin-Chu, TW;
Chia-lin Yu, Sigang, TW;
Chen-hua Yu, Hsin-Chu, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Yung-Sheng Chiu, Hsin-Chu, TW;
Hsiang-Yi Wang, Hsin-Chu, TW;
Chia-Lin Yu, Sigang, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
MOSFETs having stacked metal gate electrodes and methods of making the same are provided. The MOSFET gate electrode includes a gate metal layer formed atop a high-k gate dielectric layer. The metal gate electrode is formed through a low oxygen content deposition process without charged-ion bombardment to the wafer substrate. Metal gate layer thus formed has low oxygen content and may prevent interfacial oxide layer regrowth. The process of forming the gate metal layer generally avoids plasma damage to the wafer substrate.