The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Feb. 13, 2009
Katsuya Takemura, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Tsunehiro Nishi, Joetsu, JP;
Kazuhiro Katayama, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Katsuya Takemura, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Tsunehiro Nishi, Joetsu, JP;
Kazuhiro Katayama, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.