The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Mar. 30, 2009
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Junya Miyahara, Amagasaki, JP;
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Junya Miyahara, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.