The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Feb. 13, 2009
Meihua Shen, Fremont, CA (US);
Noel Sun, Sunnyvale, CA (US);
Nicolas Gani, San Jose, CA (US);
Han-hsiang Chen, Lingya District, TW;
Eric Pei, Tainan County, TW;
Weimin Zeng, San Jose, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Uday Mitra, Cupertino, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Noel Sun, Sunnyvale, CA (US);
Nicolas Gani, San Jose, CA (US);
Han-Hsiang Chen, Lingya District, TW;
Eric Pei, Tainan County, TW;
Weimin Zeng, San Jose, CA (US);
Thorsten B. Lill, Santa Clara, CA (US);
Uday Mitra, Cupertino, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.