The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Aug. 14, 2008
David S. Collins, Williston, VT (US);
Kai D. Feng, Hopewell Junction, NY (US);
Zhong-xiang He, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Robert M. Rassel, Colchester, VT (US);
David S. Collins, Williston, VT (US);
Kai D. Feng, Hopewell Junction, NY (US);
Zhong-Xiang He, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Robert M. Rassel, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.