The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Aug. 15, 2006
Mikio Takagi, Kanagawa, JP;
Seiichi Takahashi, Shizuoka, JP;
Hiroaki Inoue, Shizuoka, JP;
Masayuki Satou, Shizuoka, JP;
Yutaka Miura, Shizuoka, JP;
Mikio Takagi, Kanagawa, JP;
Seiichi Takahashi, Shizuoka, JP;
Hiroaki Inoue, Shizuoka, JP;
Masayuki Satou, Shizuoka, JP;
Yutaka Miura, Shizuoka, JP;
F.T.L. Co., Ltd., Kawasaki-shi, JP;
ULVAC, Inc., Chigasaki-shi, JP;
Abstract
Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jigthat has been used is again used for loading new semiconductor silicon wafer(s). The wafer(s) on the jigis subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film. After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vesseland/or treatment preparing vessel, in which a native oxide film has been removed.