The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

Apr. 11, 2007
Applicants:

Wei-chih Chen, Tainan County, TW;

Su-jen Sung, Hsin-Chu Hsien, TW;

Feng-yu Hsu, Tainan Hsien, TW;

Chun-chieh Huang, Tainan Hsien, TW;

Mei-ling Chen, Kao-Hsiung, TW;

Jiann-jen Chiou, Tainan County, TW;

Inventors:

Wei-Chih Chen, Tainan County, TW;

Su-Jen Sung, Hsin-Chu Hsien, TW;

Feng-Yu Hsu, Tainan Hsien, TW;

Chun-Chieh Huang, Tainan Hsien, TW;

Mei-Ling Chen, Kao-Hsiung, TW;

Jiann-Jen Chiou, Tainan County, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.


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