The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
May. 02, 2008
Mitsuhiro Okada, Nirasaki, JP;
Satoshi Takagi, Nirasaki, JP;
Ryou Son, Sendai, JP;
Masahiko Tomita, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Toshiharu Nishimura, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Satoshi Takagi, Nirasaki, JP;
Ryou Son, Sendai, JP;
Masahiko Tomita, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Toshiharu Nishimura, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.