The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Oct. 06, 2010
Nagarajan Rajagopalan, Santa Clara, CA (US);
Xinhai Han, Fremont, CA (US);
Ji AE Park, Santa Clara, CA (US);
Tsutomu Kiyohara, Campbell, CA (US);
Sohyun Park, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Xinhai Han, Fremont, CA (US);
Ji Ae Park, Santa Clara, CA (US);
Tsutomu Kiyohara, Campbell, CA (US);
Sohyun Park, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.