The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Oct. 25, 2006
Atsushi Nakamura, Tokyo, JP;
Hiroki Nakagawa, Tokyo, JP;
Hiromitsu Nakashima, Tokyo, JP;
Takayuki Tsuji, Tokyo, JP;
Hiroshi Dougauchi, Tokyo, JP;
Daita Kouno, Tokyo, JP;
Yukio Nishimura, Tokyo, JP;
Atsushi Nakamura, Tokyo, JP;
Hiroki Nakagawa, Tokyo, JP;
Hiromitsu Nakashima, Tokyo, JP;
Takayuki Tsuji, Tokyo, JP;
Hiroshi Dougauchi, Tokyo, JP;
Daita Kouno, Tokyo, JP;
Yukio Nishimura, Tokyo, JP;
JSR Corporation, Tokyo, JP;
Abstract
An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.