The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Jul. 02, 2002
Akihiro Kikuchi, Nirasaki, JP;
Satoshi Kayamori, Tokyo, JP;
Shinya Shima, Nirasaki, JP;
Yuichiro Sakamoto, Fuchu, JP;
Kimihiro Higuchi, Nirasaki, JP;
Kaoru Oohashi, Nirasaki, JP;
Takehiro Ueda, Nirasaki, JP;
Munehiro Shibuya, Nirasaki, JP;
Tadashi Gondai, Nirasaki, JP;
Akihiro Kikuchi, Nirasaki, JP;
Satoshi Kayamori, Tokyo, JP;
Shinya Shima, Nirasaki, JP;
Yuichiro Sakamoto, Fuchu, JP;
Kimihiro Higuchi, Nirasaki, JP;
Kaoru Oohashi, Nirasaki, JP;
Takehiro Ueda, Nirasaki, JP;
Munehiro Shibuya, Nirasaki, JP;
Tadashi Gondai, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.