The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 10, 2006
Michael C. Kutney, Santa Clara, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Ezra R. Gold, Sunnyvale, CA (US);
Ashok Sinha, Mountain View, CA (US);
Xiaoye Zhao, Palo Alto, CA (US);
Douglas H. Burns, Saratoga, CA (US);
Shawming MA, Sunnyvale, CA (US);
Michael C. Kutney, Santa Clara, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Ezra R. Gold, Sunnyvale, CA (US);
Ashok Sinha, Mountain View, CA (US);
Xiaoye Zhao, Palo Alto, CA (US);
Douglas H. Burns, Saratoga, CA (US);
Shawming Ma, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.