The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Apr. 05, 2010
Applicants:

Kazuichi Hayashi, Nirasaki, JP;

Kouichi Yatsuda, Isahaya, JP;

Masafumi Urakawa, Nirasaki, JP;

Inventors:

Kazuichi Hayashi, Nirasaki, JP;

Kouichi Yatsuda, Isahaya, JP;

Masafumi Urakawa, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 14/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A processing gas fed from a gas feed pipe () through a gas introducing port () flows first into an outer annular gas flow channel (), where it is circumferentially diffused, and then into an inner annular gas flow channel () via a passageway (), and from this inner annular gas flow channel () it flows into a gas diffusion gap () in the back surface of a shower head () via a gas feed hole. Thereafter, the processing gas is diffused in the gas diffusion gap () and delivered from gas delivery holes () to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.

Published as:
WO03081657A1; JP2003282533A; AU2003227235A1; US2005092435A1; JP4128383B2; US2010230386A1; US8038835B2;

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