The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jun. 09, 2009
Kentaro Kadonaga, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Pao-hwa Chou, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tetsuya Shibata, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Pao-Hwa Chou, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tetsuya Shibata, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.