The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
May. 18, 2010
Habib Hichri, Poughkeepsie, NY (US);
Ahmad D. Katnani, Poughkeepsie, NY (US);
Kaushik A. Kumar, Rensselaer, NY (US);
Narender Rana, Highland, NY (US);
Richard S. Wise, Newburgh, NY (US);
Hakeem B. S. Akinmade-yusuff, Beacon, NY (US);
Habib Hichri, Poughkeepsie, NY (US);
Ahmad D. Katnani, Poughkeepsie, NY (US);
Kaushik A. Kumar, Rensselaer, NY (US);
Narender Rana, Highland, NY (US);
Richard S. Wise, Newburgh, NY (US);
Hakeem B. S. Akinmade-Yusuff, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.