The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Sep. 01, 2005
Joung-wei Liou, Jhudong Township, Hsinchu County, TW;
Tsang-yu Liu, Kaoshiung, TW;
Chien-feng Lin, Sanchong, TW;
Cheng-liang Chang, Hsing-chu, TW;
Ming-te Chen, Hsing-chu, TW;
Chia-hui Lin, Dajia Township, Taichung County, TW;
Ying-hsiu Tsai, Sihhu Township, Yunlin County, TW;
Szu-an Wu, Hsin-Chu, TW;
Yin-ping Lee, Kaohsiung, TW;
Joung-Wei Liou, Jhudong Township, Hsinchu County, TW;
Tsang-Yu Liu, Kaoshiung, TW;
Chien-Feng Lin, Sanchong, TW;
Cheng-Liang Chang, Hsing-chu, TW;
Ming-Te Chen, Hsing-chu, TW;
Chia-Hui Lin, Dajia Township, Taichung County, TW;
Ying-Hsiu Tsai, Sihhu Township, Yunlin County, TW;
Szu-An Wu, Hsin-Chu, TW;
Yin-Ping Lee, Kaohsiung, TW;
Abstract
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.