The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Oct. 30, 2006
Madhavi R. Chandrachood, Sunnyvale, CA (US);
Michael N. Grimbergen, Redwood City, CA (US);
Khiem K. Nguyen, San Jose, CA (US);
Richard Lewington, Hayward, CA (US);
Ibrahim M. Ibrahim, Santa Clara, CA (US);
Sheeba J. Panayil, Santa Clara, CA (US);
Ajay Kumar, Cupertino, CA (US);
Madhavi R. Chandrachood, Sunnyvale, CA (US);
Michael N. Grimbergen, Redwood City, CA (US);
Khiem K. Nguyen, San Jose, CA (US);
Richard Lewington, Hayward, CA (US);
Ibrahim M. Ibrahim, Santa Clara, CA (US);
Sheeba J. Panayil, Santa Clara, CA (US);
Ajay Kumar, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.