The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Apr. 30, 2008
Hsiang-huan Lee, Jhudong Township, Hsinchu County, TW;
Ming Han Lee, Taipei, TW;
Ming-shih Yeh, Chupei, TW;
Chen-hua Yu, Hsin-Chu, TW;
Hsiang-Huan Lee, Jhudong Township, Hsinchu County, TW;
Ming Han Lee, Taipei, TW;
Ming-Shih Yeh, Chupei, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor contact structure includes a copper plug formed within a dual damascene, single damascene or other opening formed in a dielectric material and includes a composite barrier layer between the copper plug and the sidewalls and bottom of the opening. The composite barrier layer preferably includes an ALD TaN layer disposed on the bottom and along the sides of the opening although other suitable ALD layers may be used. A barrier material is disposed between the copper plug and the ALD layer. The barrier layer may be a Mn-based barrier layer, a Cr-based barrier layer, a V-based barrier layer, a Nb-based barrier layer, a Ti-based barrier layer, or other suitable barrier layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile