The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Apr. 02, 2008
Xiafang Zhang, San Jose, CA (US);
Nanchang Zhu, Shanghai, CN;
Yiping Feng, Cupertino, CA (US);
Min Xiang, Shanghai, CN;
Jianou Shi, Milpitas, CA (US);
Xiafang Zhang, San Jose, CA (US);
Nanchang Zhu, Shanghai, CN;
Yiping Feng, Cupertino, CA (US);
Min Xiang, Shanghai, CN;
Jianou Shi, Milpitas, CA (US);
KLA-Tencor Corporation, San Jose, CA (US);
Abstract
A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.