The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jun. 06, 2008
Shigeru Nakajima, Yamanashi, JP;
Kazuhide Hasebe, Yamanashi, JP;
Pao-hwa Chou, Yamanashi, JP;
Mitsuaki Iwashita, Yamanashi, JP;
Reiji Niino, Yamanashi, JP;
Shigeru Nakajima, Yamanashi, JP;
Kazuhide Hasebe, Yamanashi, JP;
Pao-Hwa Chou, Yamanashi, JP;
Mitsuaki Iwashita, Yamanashi, JP;
Reiji Niino, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.