The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Feb. 08, 2007
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.