The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Sep. 09, 2008
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substratesurface-activated by a plasma-treatment and a quartz substrateare bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film). Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film. Then, in the end, a surface layer (gettering layer) of the silicon filmof the SOI substrate after the heat-treatment is removed to finally prepare an SOI filmand a semiconductor substrate (SOI substrate) is obtained.