The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Aug. 12, 2004
Robert J. Small, Tucson, AZ (US);
Haruki Nojo, Kanagawa-ken, JP;
Kenichi Orui, Atsugi, JP;
Steve Masami Aragaki, Kawasaki, JP;
Atsushi Hayashida, Yokohama, JP;
Robert J. Small, Tucson, AZ (US);
Haruki Nojo, Kanagawa-ken, JP;
Kenichi Orui, Atsugi, JP;
Steve Masami Aragaki, Kawasaki, JP;
Atsushi Hayashida, Yokohama, JP;
DuPont Air Products NanoMaterials LLC, Allentown, PA (US);
Abstract
A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.