The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Feb. 06, 2008
Shijian LI, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Seon-mee Cho, Santa Clara, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Dongwon Choi, Santa Clara, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Shijian Li, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Dongwon Choi, Santa Clara, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.