The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
May. 08, 2007
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Ajit Balakrishna, Sunnyvale, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Martin Jeffrey Salinas, San Jose, CA (US);
Imad Yousif, San Jose, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Ying Rui, San Jose, CA (US);
Michael R. Rice, Pleasanton, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Ajit Balakrishna, Sunnyvale, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Martin Jeffrey Salinas, San Jose, CA (US);
Imad Yousif, San Jose, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Ying Rui, San Jose, CA (US);
Michael R. Rice, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.