The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Mar. 20, 2006
Tadahiro Ishizaka, Watervliet, NY (US);
Tsukasa Matsuda, Delmar, NY (US);
Masamichi Hara, Clifton Park, NY (US);
Jacques Faguet, Albany, NY (US);
Yasushi Mizusawa, Albany, NY (US);
Tadahiro Ishizaka, Watervliet, NY (US);
Tsukasa Matsuda, Delmar, NY (US);
Masamichi Hara, Clifton Park, NY (US);
Jacques Faguet, Albany, NY (US);
Yasushi Mizusawa, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.