The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Oct. 02, 2007
Mitsuhiro Okada, Nirasaki, JP;
Satoshi Mizunaga, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Toshiharu Nishimura, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Satoshi Mizunaga, Nirasaki, JP;
Yamato Tonegawa, Nirasaki, JP;
Toshiharu Nishimura, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.