The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Apr. 15, 2009
Chen-hua Yu, Hsin-Chu, TW;
Cheng-tung Lin, Jhudong Township, Hsinchu County, TW;
Hsiang-yi Wang, Hsinchu, TW;
Yung-sheng Chiu, Hsinchu, TW;
Chia-lin Yu, Sigang Township, Tainan County, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Cheng-Tung Lin, Jhudong Township, Hsinchu County, TW;
Hsiang-Yi Wang, Hsinchu, TW;
Yung-Sheng Chiu, Hsinchu, TW;
Chia-Lin Yu, Sigang Township, Tainan County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method for fabricating a semiconductor device for providing improved work function values and thermal stability is disclosed. The semiconductor device comprises a semiconductor substrate; an interfacial dielectric layer over the semiconductor substrate; a high-k gate dielectric layer over the interfacial dielectric layer; and a doped-conducting metal oxide layer over the high-k gate dielectric layer.