The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Feb. 07, 2007
Applicants:
Mei-ling Chen, Kaohsiung, TW;
Kuo-chih Lai, Tainan, TW;
Su-jen Sung, Hsinchu County, TW;
Chien-chung Huang, Taichung Hsien, TW;
Yu-tsung Lai, Taichung County, TW;
Inventors:
Mei-Ling Chen, Kaohsiung, TW;
Kuo-Chih Lai, Tainan, TW;
Su-Jen Sung, Hsinchu County, TW;
Chien-Chung Huang, Taichung Hsien, TW;
Yu-Tsung Lai, Taichung County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/443 (2006.01); H01L 33/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.