The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Mar. 12, 2007
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.