The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

May. 17, 2006
Applicants:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Maurits Van Der Schaar, Veldhoven, NL;

Ewoud Vreugdenhil, Valkenswaard, NL;

Harry Sewell, Ridgefield, CT (US);

Inventors:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Maurits Van Der Schaar, Veldhoven, NL;

Ewoud Vreugdenhil, Valkenswaard, NL;

Harry Sewell, Ridgefield, CT (US);

Assignees:

ASML Netherlands B.V., Veldhoven, NL;

ASML Holding NV, Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); G06F 19/00 (2006.01); B44C 1/22 (2006.01); G01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.


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