The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Sep. 29, 2006
Applicants:

Masanobu Honda, Nirasaki, JP;

Toshihiro Hayami, Nirasaki, JP;

Yutaka Matsui, Nirasaki, JP;

Inventors:

Masanobu Honda, Nirasaki, JP;

Toshihiro Hayami, Nirasaki, JP;

Yutaka Matsui, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerheadis disposed in the plasma processing chamberincluding a containerhaving a process space S for receiving a semiconductor wafer W, and a susceptordisposed in the container, for mounting the received semiconductor wafer W thereon. The susceptoris connected to high-frequency power suppliesand. An electrode supportof the gas-introducing showerheadis electrically grounded. An electrically floating top electrode plateof the gas-introducing showerheadis disposed between the electrode supportand the process space S. The top electrode platehas a surface exposed to the process space S. An insulating filmis formed of a dielectric material and disposed between the electrode supportand the top electrode plate


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