The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Apr. 14, 2006
Fengyi Jiang, Nanchang, CN;
Wenqing Fang, Nanchang, CN;
LI Wang, Nanchang, CN;
Chunlan MO, Nanchang, CN;
Hechu Liu, Nanchang, CN;
Maoxing Zhou, Nanchang, CH;
Fengyi Jiang, Nanchang, CN;
Wenqing Fang, Nanchang, CN;
Li Wang, Nanchang, CN;
Chunlan Mo, Nanchang, CN;
Hechu Liu, Nanchang, CN;
Maoxing Zhou, Nanchang, CH;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile