The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Oct. 17, 2007
Applicants:

Mark Armstrong, Hillsboro, OR (US);

Gerhard Schrom, Hillsboro, OR (US);

Sunit Tyagi, Portland, OR (US);

Paul A. Packan, Beaverton, OR (US);

Kelin J. Kuhn, Aloha, OR (US);

Scott Thompson, Portland, OR (US);

Inventors:

Mark Armstrong, Hillsboro, OR (US);

Gerhard Schrom, Hillsboro, OR (US);

Sunit Tyagi, Portland, OR (US);

Paul A. Packan, Beaverton, OR (US);

Kelin J. Kuhn, Aloha, OR (US);

Scott Thompson, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
Abstract

Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.


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