The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Apr. 11, 2007
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Douglas A. Buchberger, Jr., Livermore, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Kallol Bera, San Jose, CA (US);
Lawrence Wong, Fremont, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Matthew L. Miller, Fremont, CA (US);
Steven C. Shannon, San Mateo, CA (US);
Andrew Nguyen, San Jose, CA (US);
James P. Cruse, Soquel, CA (US);
James Carducci, Sunnyvale, CA (US);
Troy S. Detrick, Los Altos, CA (US);
Subhash Deshmukh, San Jose, CA (US);
Jennifer Y. Sun, Sunnyvale, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Douglas A. Buchberger, Jr., Livermore, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Kallol Bera, San Jose, CA (US);
Lawrence Wong, Fremont, CA (US);
Walter R. Merry, Sunnyvale, CA (US);
Matthew L. Miller, Fremont, CA (US);
Steven C. Shannon, San Mateo, CA (US);
Andrew Nguyen, San Jose, CA (US);
James P. Cruse, Soquel, CA (US);
James Carducci, Sunnyvale, CA (US);
Troy S. Detrick, Los Altos, CA (US);
Subhash Deshmukh, San Jose, CA (US);
Jennifer Y. Sun, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies fand fto either (a) respective ones of the electrodes or (b) a common one of the electrodes, where fis sufficiently high to produce a center-high non-uniform plasma ion distribution and fis sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the ffrequency to the RF parameter at the ffrequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.